Infineon IPL60R060CFD7 CoolMOS™ CFD7 Power Transistor: Advanced 600V Superjunction MOSFET for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives the need for advanced power switching components. At the forefront of this innovation is the Infineon IPL60R060CFD7, a 600V CoolMOS™ CFD7 superjunction MOSFET engineered to set new benchmarks in performance for a wide array of high-efficiency applications.

This transistor leverages Infineon's cutting-edge superjunction technology, which is renowned for drastically reducing switching and conduction losses. The CFD7 series represents a significant leap forward, building upon its predecessors with key enhancements. It features an exceptionally low typical on-state resistance (R DS(on)) of just 60 mΩ, which directly translates to reduced conduction losses and improved thermal performance. This allows designers to either extract more power from the same form factor or create more compact and lighter designs without sacrificing performance.

A defining characteristic of the CoolMOS™ CFD7 family is its integrated fast body diode. This is a critical innovation for hard- and soft-switching topologies common in power supplies. The diode offers superior reverse recovery characteristics, significantly reducing switching losses and electromagnetic interference (EMI). This makes the device particularly adept at handling high-frequency operation, enabling the design of smaller, more efficient magnetic components like transformers and inductors.

The benefits of these technological advancements are realized across numerous applications. The IPL60R060CFD7 is ideally suited for:

Server & Telecom SMPS: Where achieving 80 Plus Titanium efficiency standards is crucial.

Industrial Power Supplies: Demanding robustness and reliability in harsh environments.

Photovoltaic Inverters and Energy Storage Systems: Maximizing energy harvest and conversion efficiency.

EV Charging Infrastructure: Requiring high power density and efficient thermal management.

Furthermore, the device boasts high dv/dt and di/dt capability, enhancing its switching robustness and system reliability. Its low gate charge (Q G) also simplifies drive circuit design, ensuring fast and efficient switching with minimal drive power requirements.

ICGOOODFIND: The Infineon IPL60R060CFD7 CoolMOS™ CFD7 is a pinnacle of power transistor technology, offering an optimal blend of ultra-low conduction loss, superior switching performance, and robust integrated diode characteristics. It is an indispensable component for engineers aiming to push the boundaries of efficiency and power density in next-generation power conversion systems.

Keywords: High-Efficiency, Superjunction MOSFET, Low RDS(on), Fast Body Diode, Power Density.