Infineon IPD60R280P7SAUMA1: A 60 mΩ StrongIRFET™ Power MOSFET Engineered for High-Efficiency Automotive Applications

The relentless drive towards electrification in the automotive industry demands power semiconductors that deliver uncompromising efficiency, robustness, and reliability. Addressing this need, Infineon Technologies introduces the IPD60R280P7SAUMA1, a 60 mΩ StrongIRFET™ Power MOSFET that sets a new benchmark for performance in demanding automotive environments. This device is specifically engineered to minimize power losses and maximize efficiency in a wide array of applications, from electric power steering (EPS) and braking systems to DC-DC converters and motor control modules.

A key highlight of this MOSFET is its exceptionally low on-state resistance (R DS(on)) of just 60 mΩ. This ultra-low resistance is paramount for reducing conduction losses, which directly translates into higher system efficiency, less heat generation, and the potential for smaller, more compact thermal management solutions. The device is built upon Infineon’s advanced superjunction (SJ) technology, which is optimized to provide an outstanding low figure-of-merit (FOM), ensuring optimal switching performance.

Beyond raw efficiency, the component is designed for the harsh realities of the automotive world. It boasts AEC-Q101 qualification, guaranteeing its reliability and performance under stringent automotive operating conditions. Its high avalanche ruggedness and superior body diode robustness make it exceptionally resilient against voltage spikes and reverse recovery events, common challenges in inductive load driving. Furthermore, the low gate charge (Q G) facilitates fast switching speeds, which is crucial for high-frequency switching applications, reducing switching losses and enabling higher power density designs.

The combination of low R DS(on), high switching performance, and automotive-grade robustness makes the IPD60R280P7SAUMA1 an ideal choice for engineers designing the next generation of 48V mild-hybrid systems (MHEV) and other high-power automotive electronics, where every percentage point of efficiency gain is critical for extending range and reducing emissions.

ICGOODFIND Summary: The Infineon IPD60R280P7SAUMA1 stands out as a top-tier automotive-grade Power MOSFET that masterfully balances ultra-low conduction losses with exceptional ruggedness. Its AEC-Q101 qualified status and optimized StrongIRFET™ technology make it a superior and reliable switching solution for creating more efficient and compact automotive power systems.

Keywords: Power MOSFET, Automotive Grade, High Efficiency, Low RDS(on), AEC-Q101