Infineon IPB011N04NG OptiMOS 5 Power MOSFET: High-Efficiency, Low-Loss Solution for Advanced Power Management

The demand for higher efficiency and greater power density in modern electronic systems continues to drive innovation in power semiconductor technology. Addressing this need, the Infineon IPB011N04NG OptiMOS™ 5 Power MOSFET stands out as a benchmark product designed to deliver exceptional performance in a wide range of power management applications. Combining ultra-low on-state resistance with superior switching characteristics, this MOSFET is engineered to minimize losses and maximize efficiency in demanding circuits.

Built on Infineon’s advanced OptiMOS™ 5 technology, the IPB011N04NG operates at just 40 V, making it particularly suited for applications such as synchronous rectification in switched-mode power supplies (SMPS), motor control, and DC-DC converters in computing, telecom, and industrial environments. A key highlight is its remarkably low typical RDS(on) of just 1.1 mΩ at 10 V, which significantly reduces conduction losses. This allows designers to achieve higher power throughput while maintaining lower operating temperatures, thereby improving system reliability and reducing the need for complex cooling mechanisms.

Another standout feature is the device’s optimized gate charge (QGD), which contributes to reduced switching losses—especially critical in high-frequency switching applications. This makes the IPB011N04NG an ideal candidate for use in high-frequency power converters where both efficiency and thermal performance are paramount. The MOSFET is offered in an industry-standard SuperSO8 package, which offers an excellent balance between compact footprint and thermal efficiency, supporting automated assembly processes and helping to reduce overall system size.

Moreover, the OptiMOS™ 5 technology emphasizes robustness and reliability, with a strong focus on minimizing electromagnetic interference (EMI), thereby easing compliance with international standards. This MOSFET is also designed for ease of use in parallel configurations, enabling scalable solutions for higher current requirements without compromising stability or performance.

ICGOOODFIND:

The Infineon IPB011N04NG OptiMOS™ 5 Power MOSFET sets a high standard for power management components through its blend of ultra-low RDS(on), excellent switching performance, and robust thermal characteristics. It is an optimal solution for designers seeking to enhance efficiency and power density in next-generation power systems.

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Keywords:

Power MOSFET, High Efficiency, Low RDS(on), OptiMOS 5, Synchronous Rectification