Infineon IPD088N06N3: A High-Performance 60V OptiMOS Power MOSFET

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this evolution is Infineon Technologies with its OptiMOS™ power MOSFET family. The IPD088N06N3, a 60V N-channel MOSFET, stands as a prime example of this commitment, engineered to deliver exceptional switching performance and ultra-low on-state resistance.

Designed primarily for demanding automotive applications, such as electric power steering (EPS), braking systems, and other DC-DC conversion stages, this component is also perfectly suited for robust industrial power supplies and motor control. Its core strength lies in its remarkably low maximum R DS(on) of just 0.88 mΩ at a gate-source voltage of 10 V. This ultra-low resistance is the key to minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for smaller heatsinks and more compact designs.

Beyond its static performance, the IPD088N06N3 excels in dynamic operation. The OptiMOS™ technology ensures an excellent figure-of-merit (FOM), balancing low gate charge (Q G ) and low on-resistance. This superior combination leads to faster switching speeds and significantly reduced switching losses, which is critical for high-frequency SMPS (Switch-Mode Power Supplies) and PWM motor drives operating at frequencies where every joule of energy counts.

The device is housed in a SuperSO8 package (PG-TDSON-8), which offers a compact footprint while providing superior thermal performance and power dissipation capabilities compared to standard SO-8 packages. This makes it an ideal choice for space-constrained applications that cannot compromise on thermal management. Furthermore, it is AEC-Q101 qualified, guaranteeing its reliability and performance under the harsh conditions typical of the automotive environment, including wide temperature fluctuations and high vibrational stress.

ICGOOODFIND: The Infineon IPD088N06N3 is a benchmark in power MOSFET technology, offering a powerful synergy of ultra-low R DS(on), high switching speed, and automotive-grade robustness. It is an optimal solution for designers aiming to push the boundaries of efficiency and power density in 60V applications, from advanced automotive systems to high-performance industrial equipment.

Keywords: OptiMOS, Low R DS(on), Automotive Grade (AEC-Q101), High Efficiency, Power Density.