Infineon IMBF170R450M1 1700V 450mΩ SiC MOSFET for High-Efficiency Power Conversion
The rapid evolution of power electronics demands semiconductor devices that offer higher efficiency, greater power density, and improved thermal performance. Infineon Technologies addresses these needs with the IMBF170R450M1, a state-of-the-art 1700V silicon carbide (SiC) MOSFET that sets a new benchmark in high-voltage power conversion applications.
This MOSFET features an ultra-low typical on-resistance (RDS(on)) of just 450mΩ at 25°C, significantly reducing conduction losses compared to traditional silicon-based alternatives. The high breakdown voltage of 1700V makes it particularly suitable for demanding applications such as industrial motor drives, solar inverters, renewable energy systems, and EV charging infrastructure, where operating at high voltages and frequencies is essential.
A key advantage of SiC technology is its superior switching performance. The IMBF170R450M1 exhibits exceptionally low switching losses, enabling systems to operate at higher frequencies without compromising efficiency. This allows for the use of smaller passive components like inductors and capacitors, leading to more compact and lightweight power supply designs. Additionally, the device’s low gate charge (QG) simplifies driving requirements and enhances control responsiveness.
Thermal management is critical in high-power systems, and this component excels in this area as well. The low RDS(on) and high thermal conductivity of SiC contribute to reduced junction temperatures and improved reliability under continuous operation. The module is housed in an industry-standard TO-247 package, offering mechanical robustness and compatibility with existing assembly processes.
Engineers can leverage the IMBF170R450M1 to develop systems that achieve higher efficiency levels, ultimately contributing to energy savings and reduced carbon footprints. Its performance characteristics make it an ideal choice for next-generation power converters that require high efficiency, power density, and operational stability.
The Infineon IMBF170R450M1 1700V SiC MOSFET combines high breakdown voltage, low conduction losses, and excellent thermal properties, making it a transformative solution for modern high-efficiency power conversion systems.
Keywords:
SiC MOSFET, High-Efficiency, 1700V, Low On-Resistance, Power Conversion
