Infineon IPW65R095C7 650V CoolMOS™ Power Transistor: High Efficiency and Robust Performance for Switching Applications

Release date:2025-11-05 Number of clicks:63

Infineon IPW65R095C7 650V CoolMOS™ Power Transistor: High Efficiency and Robust Performance for Switching Applications

In the realm of power electronics, the pursuit of higher efficiency, greater power density, and enhanced reliability is relentless. The Infineon IPW65R095C7, a 650V CoolMOS™ Power Transistor, stands as a pivotal solution engineered to meet these demanding requirements in a wide array of switching applications. This superjunction MOSFET leverages Infineon's advanced technology to deliver exceptional performance where it matters most.

At the core of the IPW65R095C7's advantages is its ultra-low on-state resistance (RDS(on)) of just 95 mΩ maximum. This critically low resistance directly translates to minimized conduction losses, allowing for higher efficiency operation. Whether deployed in switched-mode power supplies (SMPS), power factor correction (PFC) stages, or lighting controllers, this characteristic ensures that more energy is delivered to the load and less is wasted as heat. This efficiency is paramount for meeting global energy standards and reducing the carbon footprint of electronic systems.

Beyond raw efficiency, the device is designed for robustness and reliability. With a drain-source voltage (VDS) rating of 650V, it offers a sufficient safety margin for handling voltage spikes and transients commonly encountered in industrial and automotive environments. The fast switching capabilities inherent to the CoolMOS™ technology further reduce switching losses, which is essential for high-frequency operation. This enables designers to shrink the size of magnetic components and heat sinks, thereby achieving higher power density and more compact system designs.

The transistor also features excellent reverse recovery characteristics, which contributes to lower electromagnetic interference (EMI) and smoother operation in circuits involving inductive loads. Its low gate charge (QG) ensures easy drive capability, simplifying the design of the gate driving circuitry and enhancing overall system cost-effectiveness.

ICGOOODFIND: The Infineon IPW65R095C7 CoolMOS™ is a superior choice for designers aiming to push the boundaries of performance in power conversion systems. Its blend of ultra-low RDS(on), high voltage resilience, and fast switching speed makes it an indispensable component for creating efficient, reliable, and compact power solutions across industrial, consumer, and automotive sectors.

Keywords: High Efficiency, Ultra-Low RDS(on), 650V Rating, Fast Switching, Robust Performance.

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