Infineon IPU60R2K1CE: A High-Performance 600V CoolMOS™ CE Power Transistor

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. Addressing these critical demands, the Infineon IPU60R2K1CE stands out as a premier 600V superjunction MOSFET from the revolutionary CoolMOS™ CE series. This power transistor is engineered to set new benchmarks in high-efficiency applications, offering designers a superior component for next-generation power supplies, industrial systems, and other demanding electronic environments.

The core of this device's superiority lies in its advanced superjunction (SJ) technology. Compared to traditional planar MOSFETs, the CoolMOS™ CE technology significantly reduces on-state resistance (RDS(on)) while simultaneously minimizing switching losses. This dual achievement is a game-changer. A lower RDS(on) translates directly to reduced conduction losses, meaning the device operates cooler and more efficiently during periods of high current flow. Furthermore, the optimized gate charge (Qg) and outstanding figure of merit (FoM) ensure that switching transitions are exceptionally fast and clean, which is crucial for high-frequency switchers aiming for higher power density.

The IPU60R2K1CE is specifically rated for 600V drain-source voltage, making it an ideal choice for off-line power applications. It is perfectly suited for:

Switched-Mode Power Supplies (SMPS): Including server, telecom, and industrial power supplies requiring high efficiency.

Power Factor Correction (PFC) stages: Both interleaved and single-phase boost PFC circuits benefit from its low losses.

Lighting: High-performance LED driving applications.

Industrial Motor Drives and Inverters.

A key feature of the CoolMOS™ CE family is its integrated fast body diode. This characteristic enhances its robustness in hard-switching and inductive load applications, improving reliability against unexpected voltage spikes and reverse recovery events. This built-in ruggedness provides designers with greater margin for error and longevity in their end products.

Thermal management is another area where this component excels. The low thermal resistance of the package ensures efficient heat dissipation, allowing for higher power handling in a compact form factor. This contributes directly to the ongoing industry trend of increasing power density without compromising reliability or requiring excessively large heatsinks.

In conclusion, the Infineon IPU60R2K1CE embodies the progress in power semiconductor technology, delivering a rare combination of high efficiency, robust performance, and thermal excellence.

ICGOODFIND: The Infineon IPU60R2K1CE is a top-tier 600V MOSFET that sets a high standard for efficiency and reliability in modern power conversion systems, making it an excellent find for engineers focused on performance and density.

Keywords:

1. CoolMOS™ CE

2. 600V MOSFET

3. High-Efficiency

4. Low RDS(on)

5. Power Density