Infineon IPB083N10N3 G5: High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge head-on, the Infineon IPB083N10N3 G5 stands as a premier example of advanced power semiconductor technology. As part of Infineon's esteemed OptiMOS™ 5 100V family, this N-channel power MOSFET is engineered to deliver exceptional performance in a wide array of power conversion applications, from industrial motor drives and solar inverters to state-of-the-art server and telecom power supplies.

At the heart of this device's superior performance is its exceptionally low typical on-state resistance (R DS(on)) of just 0.83 mΩ. This ultra-low resistance is a critical factor in minimizing conduction losses. When the MOSFET is fully switched on, it behaves almost like a perfect conductor, drastically reducing the power that is wasted as heat. This directly translates to higher overall system efficiency, cooler operation, and the potential for simpler thermal management solutions, which can reduce both system size and cost.

Furthermore, the IPB083N10N3 G5 boasts outstanding switching characteristics. The device features low gate charge (Q G) and low figures of merit (e.g., R DS(on) Q G), which are essential for achieving high-frequency operation. By enabling faster switching speeds, this MOSFET allows designers to shrink the size of passive components like inductors and capacitors. This is a fundamental step towards increasing power density—packing more power into a smaller footprint—a key requirement for next-generation compact and powerful electronic equipment.

The benefits extend beyond raw electrical performance. The component is offered in the space-saving D 2PAK (TO-263) package, which provides an excellent balance between thermal performance and board space occupancy. Its robust design ensures high reliability under strenuous conditions, making it a trustworthy choice for mission-critical applications. Designers can leverage this MOSFET to create solutions that not only meet but exceed efficiency standards, such as 80 PLUS Titanium for server PSUs, while also achieving new benchmarks in miniaturization.

ICGOOODFIND: The Infineon IPB083N10N3 G5 is a top-tier power MOSFET that masterfully balances ultra-low conduction loss, fast switching speed, and robust thermal performance. It is an ideal technology enabler for engineers striving to push the boundaries of efficiency and power density in modern AC-DC and DC-DC power conversion systems.

Keywords: Power MOSFET, High Efficiency, OptiMOS™ 5, Low R DS(on), Power Density.