Infineon IKW08T120: High-Performance 1200V TRENCHSTOP™ IGBT7 in TO-Leaded Package
The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives continuous innovation in semiconductor technology. Addressing these demands, Infineon Technologies introduces the IKW08T120, a benchmark-setting 1200V IGBT that encapsulates the seventh-generation TRENCHSTOP™ technology in a classic, industry-standard TO-247 package. This device is engineered to deliver superior performance in a wide range of applications, including solar inverters, UPS systems, industrial motor drives, and welding equipment.
At the heart of the IKW08T120 is the advanced IGBT7 technology. This generation represents a significant leap forward, offering an optimal balance between low saturation voltage (VCE(sat)) and minimal switching losses. A key innovation is the implementation of a micro-pattern trench (MPT) structure. This design drastically reduces overall power losses, enabling higher switching frequencies or lower operating temperatures compared to previous generations. For designers, this translates into the ability to create more compact and efficient systems without compromising on thermal performance or robustness.

The device is characterized by its very low typical saturation voltage of 1.55 V (at IC = 8A, VGE = 15V, Tvj = 25°C), which directly contributes to reduced conduction losses. Furthermore, it features a tight parameter distribution and a high short-circuit robustness of 5 µs, ensuring system stability and reliability even under extreme fault conditions. The integrated reverse-conducting diode is optimized for soft switching behavior, which simplifies circuit design and enhances the overall efficiency of the power stage.
Housed in the ubiquitous TO-247 package, the IKW08T120 offers excellent thermal performance and mechanical stability. The through-hole design ensures proven reliability and simplifies the assembly process, making it a versatile choice for both new designs and legacy product upgrades. Its high power density makes it exceptionally suitable for power stages where cooling might be a challenge.
ICGOODFIND: The Infineon IKW08T120 stands as a pinnacle of power switching technology, masterfully combining the groundbreaking low-loss特性 of IGBT7 with the proven reliability of a TO-leaded package. It is an ideal solution for engineers striving to maximize efficiency and power density in high-voltage applications.
Keywords: IGBT7, TRENCHSTOP™, High Efficiency, 1200V, TO-247
